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UTC 2SC3834
NPN EPITAXIAL SILICON TRANSISTOR
SWITCH NPN TRANSISTOR
DESCRIPTION
The UTC 2SC3834 is an epitaxial planar type NPN silicon transistor.
APLLICATION
*Humidifier,DC-DC converter,and general purpose.
1
TO-220
1: BASE
2:COLLECTOR
3: EMITTER
ABSOLUTE MAXIMUM RATINGS (Ta=25C)
PARAMETER
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current (PULSE) Collector Power Dissipation( Tc=25C ) Junction Temperature Storage Temperature
SYMBOL
VCBO VCEO VEBO IB Ic Pc Tj TSTG
RATING
200 120 8 3 7 50 150 -55 ~ +150
UNIT
V V V A A W C C
ELECTRICAL CHARACTERISTICS (Ta=25C,unless otherwise specified)
PARAMETER
Collector Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Transfer Ratio Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Output Capacitance
SYMBOL
BVCEO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob
TEST CONDITIONS
Ic= 50mA VCB=200V, IE=0 VEB= 8V, Ic =0 VCE= 4V,Ic= 3A Ic=3A ,IB=0.3A Ic=3A ,IB=0.3A VCE=12V,IE=-0.5mA,f=100MHz VCB= 10V, IE= 0 A,f=1MHz
MIN
120
TYP
MAX
100 100 220 0.5 1.2
UNIT
V A A V V MHz pF
70
30 110
TYPE SWITCHING CHARACTERISTCS (Common Emitter)
Vcc(V) 50 RL() 16.7 Ic (A) 3 VBB1(V) 10 VBB2(V) -5 IB1(A) 0.3 IB2(A) -0.6 Ton(A) 0.5(max) Tstg(A) 3.0(max) Tf (A) 0.5(max)
UTC
UNISONIC TECHNOLOGIES
CO. LTD
1
QW-R203-026,A
UTC 2SC3834
NPN EPITAXIAL SILICON TRANSISTOR
IC-VBE Temperature Characteristics (Typical)
7 6 2
ELECTRICAL CHARACTERISTICS CURVES
Ic-VCE Characteristics(Typical)
A 200m
VCE(sat)-IB Characteristics (Typical) Collector-Em itter Saturation Voltage VCE(sat) (V)
7 6 Collector Current Ic (A) 5 4 3 2 1 0
A 150m A 100m 60mA 40mA 20mA
Collector Current Ic (A)
5 4 3 2 1 0
ase Tem p) se T e mp ) (Ca 25
1
(C
IB=10mA
0 1 2 3 4 Collector-Emitter Voltage VCE(V)
0 0.005 0.01
0.05
0.1
0.5
1
0
0.5
- 30 (C ase
1 25
Temp)
5A
3A
IC = 1
Transient Thermal Resistance j-a (C/W )
HFE-IC Characteristics (Typical) DC Current Gain HFE
VCE=4V 100 Typ
HFE-Ic Temperature Characteristics (Typical) DC Current Gain HFE
300 VCE=4V
125 25
A
1.0 1.1
Base Current IB(A)
Base-Emittor Voltage VBE(V)
j-a-t Characteristics
4
200
100
-30
1
50
50
0.5 0.3
200.0 2
Collector Current IC(A)
0. 1
0.5
1
57
20 0.01
0.05 0.1
0.5
1
5
7
1
10
100
1000
Collector Current IC(A)
Time t(ms)
M axim um Pow er Dissipation Pc (W )
fT-IE Characteristics (Typical)
30 Z) VCE=12V
Safe Operating Area (Single Pulse)
20 10
10 0m s
Pc-Ta Derating
50
Cut- off Frequency fT (M H
Collector Current Ic (A)
5
10 ms
40
W ith
20
In f in
30
ite a He
1 0.5 Without Healstink Natural Cooling 0.1
n tsi k
20
10
10 WithoutHeatsink 0 25 50 75 100 125 150
0 -0.01
-0.05 -0.1
-0.5
-1
-5
0.05
5
10
50
120
200
2 0
Emitter Current IE(A)
Collect-Emitter Voltage VcE(V)
Ambient Temperature Ta()
UTC
UNISONIC TECHNOLOGIES
CO. LTD
2
QW-R203-026,A
UTC 2SC3834
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES
CO. LTD
3
QW-R203-026,A

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